Credit Structure:(3-0)3

Catalog Description:
Introduction to microelectronics processing. Silicon refining. Crystal growth. Chemical rate processes and kinetics, chemical vapor deposition incorporation and transport of dopants. Physical and physico-chemical rate processes. Design of chemical reactors and process equipment used in microelectronics manufacturing.

Course Objectives:
This course is an introduction to the microelectronics technology and the main chemical processes involved in the microelectronics manufacturing.

Prerequisites:
None

Textbook(s):
H. L. Hong, "Fundamentals of Microelectronics Processing", McGraw Hill, 1990
S. Middleman, A. K. Hochberg, "Process Engineering Analysis in Semiconductor Fabrication", Mc Graw Hill, 1991

Reference:
None

Syllabus:
I. Introduction : (1 week)
Integrated circuits, semiconductors and charge carriers, basic relationships and conductivity, basic units of integrated circuits, elementary device physics, microelectronics manufacturing processes.
II. Silicon Refining and Other Raw Materials (1 week)
Metallurgical grade silicon and source gases, electronic grade silicon, metalorganic compounds.
III. Bulk Crystal Growth (1 week)
Crystal structures and defects, crystal growth and impurity distribution, oxygen precipitation.
IV. Chemical Rate Processing Kinetics (2.5 weeks)
Growth processes of films of crystalline structure, homogeneous reactions, heterogeneous reactions and deposition kinetics, gas-solid reactions, photochemical reactions, selective deposition.
V. Chemical Vapor Deposition Reactors (2.5 weeks)
Regains of fluid flow, free convection and flow stability, intrinsic kinetics and transport effects, reactor design (isothermal and non-isothermal reactors), molecular flow reactors, continuous reactors.
VI. Incorporation and Transport of Dopants (1 week)
Nature of diffusion in solids, dopant incorporation, radiation damage and annealing, dopent redistribution and autodoping.
VII. Pattern generation, Transfer and Delineation (1 week)
Basics of optics and particle beams, illumination and pattern transfer, resists, resist development, edge shape and allignment.
VIII. Physical and Physicochemical Rate Processes (2 weeks)
Evaporation and physical vapor deposition, plasma, physical sputtering, plasma deposition and gas-solid reactions, plasma etching.
IX. Physical Vapor Deposition Apparatus and Plasma Reactors (2 weeks)
Physical vapor deposition apparatus, plasma reactors, transport properties of ions and electrons, plasma characteristics, intrinsic kinetics, and plasma and transport effects, plasma reactor design.

Homeworks, Quizzes, Projects:
A term project is given

Computer Usage:
None

Laboratory work:
None

Category Content:
Mathematics and Basic Sciences: 1 credit
Engineering Design: 0.5 credit
Engineering Sciences: 1.5 credits
Humanities & Social Sciences: None
Departmental: None

Instructors:
Deniz Üner